RASIRC Newsroom Press Releases

Published on June 23, 2022 - 13:30 GMT

Low Resistivity Halogen-Free TiN Films Grown with Hydrazine at Low Temperature

Very thin films grown by ALD with hydrazine on SiCOH and SiO2 SAN DIEGO, CA, USA, June 23, 2022 /⁨EINPresswire.com⁩/ -- RASIRC announced new UCSD research shows that TiN film grown by low temperature ALD can yield resistivity below 220 uΩ-cm with a non- …

Distribution channels: Chemical Industry, International Organizations ...
Published on June 23, 2022 - 08:00 GMT

RASIRC Study Shows Improved Yield of Hafnium Oxides Devices with Hydrogen Peroxide Gas

Thinner MOSCAP Grown with H2O2 Compared to Water Vapor SAN DIEGO, CA, USA, June 23, 2022 /⁨EINPresswire.com⁩/ -- RASIRC in collaboration with University of California, San Diego (UCSD) will publish data that hydrogen peroxide (H2O2) gas is a better …

Distribution channels: Chemical Industry, International Organizations ...
Published on May 25, 2022 - 13:00 GMT

Hydrogen Peroxide Gas Plasma Enables Extremely Dense Hydroxyl Surface

Density and roughness of three-dimensional structures critical to high breakdown voltage and low leakage in next generation semiconductors SAN DIEGO, CA, USA, May 25, 2022 /⁨EINPresswire.com⁩/ -- RASIRC announced results from a recent study that shows a …

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Published on April 20, 2022 - 12:00 GMT

RASIRC to Present Data of HZO Films Grown with Hydrogen Peroxide Gas

Key development in enables next generation high-K dielectric films for high volume manufacturing SAN DIEGO, CA, UNITED STATES, April 20, 2022 /⁨EINPresswire.com⁩/ -- RASIRC announced that it will be presenting “Hydrogen Peroxide Gas: From R&D to HVM” …

Distribution channels: Chemical Industry, Electronics Industry ...
Published on April 13, 2022 - 12:00 GMT

RASIRC Study Shows Hydrogen Plasma Damage Minimized by Hydrogen Peroxide Gas

Use of Hydrogen Plasma in Area Selective Deposition Now Possible SAN DIEGO, CA, UNITED STATES, April 13, 2022 /⁨EINPresswire.com⁩/ -- A recent study by RASIRC shows that H2O2 doping during hydrogen plasma exposure substantially protected oxide layers …

Distribution channels: Chemical Industry, Electronics Industry ...
Published on March 30, 2022 - 12:00 GMT

RASIRC Nitride Wizard Models Precursor Reactivity with Ammonia and Hydrazine

Web-based tool reduces experimentation time and cost in ALD and CVD processes SAN DIEGO, CA, UNITED STATES, March 30, 2022 /⁨EINPresswire.com⁩/ -- RASIRC today announced the immediate availability of its new ALD Nitride Wizard™ for rapid precursor …

Distribution channels: Chemical Industry, Electronics Industry ...
Published on March 15, 2022 - 12:00 GMT

RASIRC Study Shows Nitride Film Growth at 225°C with Hydrazine

Hydrazine outperforms Ammonia and demonstrates viability of TMS as aluminum source SAN DIEGO, CA, UNITED STATES, March 15, 2022 /⁨EINPresswire.com⁩/ -- RASIRC research shows that aluminum nitride can be grown thermally at 225°C without detrimental oxygen …

Distribution channels: Chemical Industry, Electronics Industry ...
Published on March 4, 2022 - 10:30 GMT

China Grants Patent to RASIRC for BRUTE® Hydrazine

Invention enables safer, low temperature processing of next generation semiconductors SAN DIEGO, CA, UNITED STATES, March 4, 2022 /⁨EINPresswire.com⁩/ -- RASIRC announced that China has granted patent number CN 109152990 B related to the delivery of …

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Published on February 24, 2022 - 16:00 GMT

RASIRC Patent Granted for Controlled Delivery of Hydrogen Peroxide Gas

Novel method for generation of H2O2 gas granted in US and Japan SAN DIEGO, CA, UNITED STATES, February 24, 2022 /⁨EINPresswire.com⁩/ -- RASIRC announced that the United States Patent and Trademark Office has granted Patent # US 11,154,792 B2 for a novel …

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Published on February 23, 2022 - 13:00 GMT

RASIRC Survey of Hydrazine (N2H4) in Semiconductor Applications Shows Growing Activity in Thin Films at Low Temperature

Hydrazine Addresses Increasing Need for More Reactive Nitrogen Sources SAN DIEGO, CA, UNITED STATES, February 23, 2022 /⁨EINPresswire.com⁩/ -- RASIRC today published a survey of semiconductor and related applications that use hydrazine gas. The growing …

Distribution channels: Chemical Industry, Electronics Industry ...
Published on January 18, 2022 - 18:30 GMT

Record Low Resistivity Titanium Nitride Film Fabricated by Thermal ALD

Ultra-dry hydrazine enables growth at low temperature SAN DIEGO, CALIFORNIA, UNITED STATES, January 18, 2022 /⁨EINPresswire.com⁩/ -- An IITC paper authored by researchers from UCSD, Samsung, and RASIRC demonstrated record low resistivities for low …

Distribution channels: Chemical Industry, Electronics Industry ...

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RASIRC
+1 858-259-1220

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RASIRC
7815 Silverton Avenue
San Diego, California, 92126
United States
+1 858-259-1220
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RASIRC transforms liquids into dynamic gases that power process innovation in semiconductor and adjacent markets. By commercializing molecules for lower temperature processes, RASIRC patented technology enables the manufacture of atomic-scale oxides, nitrides, and metals. Innovative products such as BRUTE Peroxide, Brute Hydrazine, the Peroxidizer®, and Rainmaker® Humidification Systems are being used to develop solutions for 5G, AI, IOT, and advanced automation. What makes RASIRC a unique industry leader is our technical expertise and commitment to solving complex industry challenges for our customers. Our team of industry experts has a proven track record of being first to market by efficiently delivering state of the art technology that reduces cost, improves quality, and dramatically improves safety. With our customers at the forefront of all we do, we continue to research, develop, and design innovative products that purify and deliver ultra-pure gas from liquids for the semiconductor and related markets. Contact RASIRC to help solve your complex problems.

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