June 8, 2009 (FinancialWire) — Cree, Inc. (NASDAQ: CREE) has signed a definitive agreement with RFHIC Corp. (Suwon, Korea) for Cree to supply GaN-on-SiC transistors to RFHIC for their GaN HEMT amplifier product families.

In addition, Cree and RFHIC have entered into a market development agreement to facilitate deeper market penetration of GaN HEMT solutions by leveraging Cree’s expertise in GaN transistor production on SiC and its MMIC foundry capability and RFHIC’s leadership position in innovative packaging, amplifier integration and volume assembly capabilities.

Cree is a market-leading innovator of semiconductor solutions for wireless and power applications, lighting-class LEDs, and LED lighting solutions.

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