STMicroelectronics Debuted its 3rd Gen of SiC MOSFET With a 650V Device
STMicroelectronics has announced their third generation of STPOWER silicon-carbide (SiC) MOSFETs, targeting electric-vehicle (EV) powertrains, as well as other applications in which power density and energy efficiency, and reliability are key requirements.
It is known as SCT040H65G3AG The component typically has a 40mO resistance on-resistance and can handle 30A through its Kelvin source H2PAK-7 packaging. SiC MOSFETs have also an increased voltage rating relative to the size of their die as compared to silicon counterparts, making this technology a great option for EV applications as well as fast-charging EV infrastructures. SiC 650V MOSFET SiC 700V MOSFET initially was designed for testing with only limited samples being made available.
Third-generation transistors will be available in packages that include STPAK, H2PAK-7L, HiP247-4L, and HU3PAK as a single die, and also in the AcePack range comprising power modules. The packages come with a variety of design features, such as specifically designed cooling tabs that facilitate connection to base plates and heat spreaders for EV applications.
As per the statement of the company, it has finished the qualification of the third generation SiC technology platform and anticipates bringing the majority of its product derivatives to maturity commercially at the end of 2021.
About STMicroelectronics
STMicroelectronics is a well-known semiconductor business across the world. They specialize in the development of semiconductor solutions for a wide range of microelectronics applications. STMicroelectronics has unique silicon and system knowledge, a robust production capability, a diverse IP portfolio, and strong strategic partnerships. STMicroelectronics has been a pioneer in System-on-Chip (SoC) technology as a result of these benefits, and its products are helping to realize today's convergence trends.
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