May 12, 2010 (FinancialWire) — RF Micro Devices, Inc. (NASDAQ: RFMD) has qualified its second high-power Gallium Nitride process technology, expanding the company's industry-leading portfolio of compound semiconductor technologies.

RFMD's second high-power GaN HEMT process technology achieves 1-2dB higher gain and 6dB greater linearity than its first high-power GaN process technology at moderately lower power density. RFMD's GaN2 targets CATV broadband transmission products and other multi-market applications and is optimized for higher linearity, higher gain and lower voltage operation.

RFMD's GaN2 reliability measurements confirm a useful lifetime of over 17 million hours at a channel temperature of 200 degrees Celsius. This industry-leading reliability performance is especially noteworthy because GaN2 is an early stage process on RFMD's GaN technology development roadmap. Additional technologies in development include MMIC process modules with complimentary Integrated Passive Component technology.

RF Micro Devices, Inc. (NASDAQ: RFMD) is a leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies.

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