Silicon Germanium (SiGe) Substrates In Stock
Silicon Germanium (SiGe)strained silicon for research/production.
Pls see below for the SiGe on Si wafer general specification, Mini order qty. 10~15pcs, price depends on customer's requirements.
Substrate
Description Prime, Single crystal Silicon
Diameter 100mm, 150mm, 200mm
Thickness Semi-Standard
Resistivity 1-100 Ohm.cm
Type P-type/N-type
Polish One side epi polished
Orientation (100)
Epitaxial layer
Composition SixGe1-x
Thickness Upon-requst
Dopant None
Stress state Strained/Relaxed
Christian Baker
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UniversityWafer, Inc.
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